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PDF 55PT Data sheet ( Hoja de datos )
| Número de pieza | 55PT | |
| Descripción | Stansard SCRs | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 55PT (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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SEMICONDUCTOR
55PT Series RRooHHSS
Stansard SCRs, 55A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
55
600 to 1600
80
Unit
A
V
mA
DESCRIPTION
The 55PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500VRMS).
K
K AG
KAG
TO-220AB (non-Insulated) TO-220AB (lnsulated)
(55PTxxA)
(55PTxxAI)
A
K AG
TO-3P (non-Insulated)
(55PTxxB)
A
KAG
TO-3P (Insulated)
(55PTxxBI)
KA
G
TO-263 (D2PAK)
(55PTxxH)
KA
G
2(A)
TO-247AB (non-Insulated)
(55PTxxC)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
VD = 67% VDRM, tp = 200μs, IG = 0.3A
dIG/dt = 0.3A/μs
IT(RMS)
IT(AV)
ITSM
I2t
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=85°C
Tc=80°C
Tc=70°C
Tc=85°C
Tc=80°C
Tc=70°C
t = 20 ms
t = 16.7 ms
dI/dt F = 60 Hz
Tj = 125ºC
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Operating junction temperature range
Tj
Maximum peak reverse gate voltage VRGM
VALUE
55
35
520
540
1352
150
5
10
2
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
V
www.nellsemi.com
Page 1 of 5
1 page  
SEMICONDUCTOR
Case Style
55PT Series RRooHHSS
TO-3P
R 4.60 (0.181)
15.50 (0.610)
15.10 (0.594)
Φ4.17 (0.164)
4.08 (0.160)
4.60 (0.181)
4.40 (0.173)
1.55 (0.061)
1.45 (0.057)
3.65 (0.144)
3.40 (0.134)
21.10 (0.831)
20.40 (0.803)
16.50 (0.650)
15.80 (0.622)
KAG
1.40 (0.055)
1.20 (0.047)
15.60 (0.614)
14.35 (0.565)
5.65 (0.222)
5.40 (0.213)
5.65 (0.222)
5.40 (0.213)
0.70 (0.028)
0.50 (0.020)
2.90 (0.114)
2.70 (0.106)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
A
4.83 (0.190)
4.06 (0.160)
9.14 (0.360)
8.13 (0.320)
K AG
15.85 (0.624)
15.00 (0.591)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
5.20 (0.205)
4.95 (0.195)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
2.79 (0.110)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
16.15 (0.242)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
20.80 (0.819)
21.46 (0.845)
KA
4.50 (0.177)Max
15.40 (0.606)
14.30 (0.560)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
3.55 (0.138)
3.81 (0.150)
G
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
5.45 (0.215)
www.nellsemi.com
Page 5 of 5
RoHS
2(A)
3(G)
1(K)
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 55PT.PDF ] | |
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