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Datasheet 1N6271A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6271A | TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power - 1500 Watts
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA.
0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN.
♦ Plastic package has Underwriters Laboratory Fl |  General Semiconductor | tvs-diode |
| 2 | 1N6271A | Zener Diode, Rectifier |  Microsemi Corporation | tvs-diode |
| 3 | 1N6271A | TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR DC COMPONENTS CO., LTD.
R
1.5KE6.8 THRU 1.5KE440CA
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE RANGE - 6.8 to 440 Volts PEAK PULSE POWER - 1500 Watts
FEATURES
* Glass passivated junction * 1500 Watts Peak Pulse Power capability on 10/1000 µs waveform * |  Dc Components | tvs-diode |
| 4 | 1N6271A | Diode TVS (Transient Voltage Suppressor) 1N6267 - 1N6303A
VBR : 6.8 - 200 Volts PPK : 1500 Watts
FEATURES :
* 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V
TRANSIENT VOLTAGE SUPPRESSOR
DO-2 |  EIC discrete Semiconductors | tvs-diode |
| 5 | 1N6271A | Diode, Rectifier, TVS Type 1.5KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 440 Volts 1500 Watt Peak Power 5.0 Watt Steady State
FEATURES l l l l l l l l Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated chip junction in Molded Plastic package 15 |  TRSYS | tvs-diode |
| 6 | 1N6271A | TRANSZORB Transient Voltage Suppressors 1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power - 1500 Watts
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA.
0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN.
♦ Plastic package has Underwriters Laboratory Fl | General Semiconductor | tvs-diode |
| 7 | 1N6271A | 1500 Watt MosorbE Zener Transient Voltage Transient Voltage 1N6267A Series 1500 Watt Mosorb™ Zener Transient Voltage Suppressors
Unidirectional*
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedan |  ON Semiconductor | tvs-diode |
| 8 | 1N6271A | TRANSZORB Transient Voltage Suppressors 1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power - 1500 Watts
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA.
0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN.
♦ Plastic package has Underwriters Laboratory Fl | General Semiconductor | tvs-diode |
| 9 | 1N6271A | TRANSZORB Transient Voltage Suppressors 1.5KE Series and 1N6267 thru 1N6303A
Vishay Semiconductors
formerly General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
d e d n ange e t Ex e R Features g a t Vol
V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 440V Peak Pulse Power 1500W
1.0 (25.4) MIN. |  Vishay Siliconix | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | | |
| 8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe  Unisonic Technologies mosfet | | |
| 9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat  BL diode | |
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