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PDF SPC6606 Data sheet ( Hoja de datos )
| Número de pieza | SPC6606 | |
| Descripción | N & P Pair Enhancement Mode MOSFET | |
| Fabricantes | SYNC POWER | |
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Hay una vista previa y un enlace de descarga de SPC6606 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SPC6606
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6606 is the N-Channel and P-Channel
enhancement mode power field effect transistors
w h i c h are produced using high cell density, DMOS
trench technology. This high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are
needed.
FEATURES
N-Channel
12V/4.0A,RDS(ON)=26mΩ@ VGS=4.5V
12V/3.0A,RDS(ON)=35mΩ@ VGS=2.5V
12V/2.0A,RDS(ON)=50mΩ@ VGS=1.8V
P-Channel
-12V/-3.3A,RDS(ON)=70mΩ@ VGS=-4.5V
-12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V
-12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
Super high density cell design for
extremely low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TDFN2X2-6L package design
APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
PIN CONFIGURATION( TDFN2X2-6L)
PART MARKING
2015/07/20 Ver.1
Page 1
1 page  
SPC6606
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
Fig 7 Capacitance vs. Drain Voltage
Fig. 8 Safe Operation Area
Fig. 9 Normalized Maximum Transient Thermal Impedance
2015/07/20 Ver.1
Page 5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SPC6606.PDF ] | |
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