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PDF AO4708 Data sheet ( Hoja de datos )
| Número de pieza | AO4708 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4708
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM AO4708 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent RDS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Product Summary
VDS (V) = 30V
ID =15A (VGS = 10V)
RDS(ON) < 8.7mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
Power DissipationA
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
30
±12
15
12
80
25
94
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
V
A
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1
0.8
0.6
0.4
1.0E-05
0.2
30A
20A
10A
5A
IS=1A
1.0E-06
0 50 100 150 200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
50 20
45 di/dt=1000A/us
40
125ºC
16
35
30
25ºC
12
25
20 Qrr
15
125ºC
8
10 Irm
5
25ºC
4
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
50 15
Is=20A
40
30
12
125ºC
25ºC 9
20
Qrr
10
125ºC
25ºC
6
3
Irm
00
0 200 400 600 800 1000 1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
12 2.4
di/dt=1000A/us
11
125ºC
2.1
10 1.8
9
25ºC
1.5
8 trr
1.2
7
6S
25ºC
0.9
0.6
5
125ºC
0.3
4 0.0
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
18
125ºC
16
14 25ºC
12
Is=20A
2.5
2.0
1.5
10
25ºC
8
125ºC
6
trr 1.0
S
0.5
4 0.0
0 200 400 600 800 1000 1200
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4708.PDF ] | |
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