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PDF MBRF30100CT Data sheet ( Hoja de datos )

Número de pieza MBRF30100CT
Descripción SCHOTTKY BARRIER RECTIFIER
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SCHOTTKY BARRIER RECTIFIER
MBRF30100CT
REVERSE VOLTAGE – 100Volts
FORWARD CURRENT – 30 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Low forward voltage drop
High efficiency
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
ITO-220AB
MECHANICAL DATA
Case Material: Plastic material, UL flammability
classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating
Polarity indicator: As marked on the body
Weight: 0.06 ounces, 1.70 grams
Component in accordance to RoHs 2002/95/EC
ESD capability : HBM_8KV (JESD22-A114)
Maximum mounting torque = 0.5 N.m (5.1 Kgf.cm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
MBRF30100CT
UNIT
Device marking code
Note
MBRF30100CT
---
Maximum Repetitive Peak Reverse Voltage
Average Rectified Output Current @δ=0.5 (FIG.1_per diode)
VRRM
IF
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM
Storage temperature range
TSTG
Operating junction temperature range
TJ
PARAMETER
TEST CONDITIONS
SYMBOL
Min.
100
30
250
-55 to +175
-55 to +175
Typ.
Max.
V
A
A
°C
°C
UNIT
Breakdown voltage
IR=0.1mA
Tj=25°C
Forward Voltage (1)
IF=15A
IF=30A
Tj=25°C
Tj=125°C
Tj=25°C
Leakage Current
VR=100V
Tj=25°C
Tj=125°C
THERMAL CHARACTERISTIC
VB
VF
IR
SYMBOL
100
---
---
---
---
---
---
0.75
0.62
---
0.001
0.5
Typical
--- V
0.80
0.67 V
0.93
0.1
10
mA
UNIT
Typical thermal resistance_Junction to Case (2)
RΘJC
3.5 °C/W
Typical thermal resistance_Junction to Lead (2)
RΘJL
Note :
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Thermal Resistance test performed in accordance with JESD-51. RΘJL is measured at the PIN 2, RΘJC
is measured at the top centre of body.
3.5 °C/W
REV. 3. Oct-2010, KTHC59

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