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PDF MBR30200CT Data sheet ( Hoja de datos )
| Número de pieza | MBR30200CT | |
| Descripción | Dual High Voltage Schottky Rectifier | |
| Fabricantes | HUAKE | |
| Logotipo |  |
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MBR30200CT
Dual High Voltage Schottky Rectifier
●Features：
■Common Cathode Structure
■Low Power Loss and High Efficiency
■Low Forward Voltage Drop
■High Surge Capability
●Application:
■ High Frequency Switch
■ Free Wheeling,and Polarity Protection Applications
Absolute Maximum Ratings(Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
200
VR
IF(AV)
IFSM
Maximum DC Reverse Voltage
Average Rectified Forward Current, Tc=120°C
Peak Forward Surge Current,8.3ms Half Sine wave
200
15(Per Leg)
30(Per Device)
250
Tj Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55 to+150
Unit
V
V
A
A
°C
°C
Thermal Characteristics(Tc=25°C unless otherwise noted)
Symbol
Parameter
RθJC
Thermal Resistance,Junction to Case Per Leg
RθJA Thermal Resistance,Junction to Ambient Per Leg
Max
2.0
84
Unit
°C /W
°C /W
Electrical Characteristics(Tc=25°C unless otherwise noted)
Symbol
VRRM
IR
Parameter
Maximum Repetitive
Reverse Voltage
Reverse Current
VF Forward Voltage
Test Conditons
IR=100μA
VR =200V Tc=25°C
VR =200V Tc=125°C
IF=15A Tc=25°C
IF=15A Tc=125°C
IF=30A Tc=25°C
IF=30A Tc=125°C
Min Max Unit
200 V
0.1
5
0.97
0.87
1.14
1.04
mA
V
HUAKE semiconductors 2014.08
1/3 编号：HK-WI-TD-004 版本/版次：A/0
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR30200CT.PDF ] | |
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