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Número de pieza | IRFBE30S | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFBE30S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
800
VGS = 10 V
78
9.6
45
Single
3.0
I2PAK
(TO-262)
D2PAK
(TO-263)
D
G
G
SD
GD S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
S
N-Channel MOSFET
D2PAK (TO-263)
SiHFBE30S-GE3
IRFBE30SPbF
SiHFBE30S-E3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D2PAK (TO-263)
SiHFBE30STRL-GE3a
IRFBE30STRLPbFa
SiHFBE30STL-E3a
I2PAK (TO-262)
SiHFBE30L-GE3
IRFBE30LPbF
SiHFBE30L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12).
c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600 V, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
800
± 20
4.1
2.6
16
1.0
260
4.1
13
125
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91119
S11-1053-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91119
S11-1053-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFBE30S.PDF ] |
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