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PDF AUIRFS3006 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFS3006 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
D
G
S
PD - 97713
AUIRFS3006
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
2.0m:
2.5m:
c270A
195A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
G
D2Pak
AUIRFS3006
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
270
191
195
1080
375
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
10
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
x x10lbf in (1.1N m)
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jJunction-to-Ambient
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/22/11
1 page  
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
Fig 9.TMC a, CxiamseuTmemDpreariantuCreu(r°rCe)nt vs.
Case Temperature
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
60
AUIRFS3006
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10 LIMITED BY PACKAGE
1msec
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
80
ID = 5mA
75
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP
20A
27A
BOTTOM 170A
800
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
5 Page 
AUIRFS3006
Ordering Information
Base part number
AUIRFS3006
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRFS3006
AUIRFS3006TRL
AUIRFS3006TRR
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFS3006.PDF ] | |
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