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PDF BS170P Data sheet ( Hoja de datos )
| Número de pieza | BS170P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | marutsu | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 60 Volt VDS
* RDS(on)=5Ω
BS170P
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb =25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb =25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
60
270
3
±20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V ID=100µA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
0.8
3 V ID=1mA, VDS=VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
10 nA VGS=15V, VDS=0V
0.5 µA VGS=0V, VDS=25V
Static Drain-Source
RDS(on)
on-State Resistance (1)
5 Ω VGS=10V, ID=200mA
Forward
gfs
Transconductance (1)(2)
200 mS VDS=10V, ID=200mA
Input Capacitance (2) Ciss
60 pF VGS=0V, VDS=10V
f=1MHz
Turn-On Time (2)(3)
t(on)
10 ns VDD≈15V, ID=600mA
Turn-Off Time (2)(3)
t(off)
10 ns
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
3-27
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