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Número de pieza | MBRF10100 | |
Descripción | Isolated 10.0 AMPS. Schottky Barrier Rectifiers | |
Fabricantes | CumSumI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBRF10100 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! 1A TMHRU 1A7 BRF1035 thru MBRF10200
®
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
ITO-220AC
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.055(1.4)
.039(1.0)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125oC
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Symbol
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
MBR
1035
35
24
35
MBR
1045
45
31
45
MBR
1060
60
42
60
MBR
1090
90
63
90
10
32
150
MBR
10100
100
70
100
MBR
10150
150
105
150
MBR
1022 00
Units
200 V
140 V
200 V
A
A
A
1.0 0.5 A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25oC
IF=10A, TC=125oC
IF=20A, TC=25oC
IF=20A, TC=125oC
VF
0.70
0.57
0.84
0.72
0.80
0.70
0.95
0.85.
0.85
0.95
0.71 - V
--
--
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
@ Tc=125 oC (Note 2)
IR 0.1
15 10
0.1 mA
6.0 mA
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
dV/dt
Cj
RθJC
TJ
TSTG
10,000
500
3.0
-65 to +150
-65 to +175
V/uS
pF
oC/W
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
MAR-14,2006,REV.3
CUMSUMI SEMICONDUCTOR INTERNATIONAL
® www.cumsumi.com
1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBRF10100.PDF ] |
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