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PDF BSP89 Data sheet ( Hoja de datos )
| Número de pieza | BSP89 | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP89 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Rev. 2.2
SIPMOSÒ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
• Pb-free lead plating; RoHS compliant
• e4e.5lVearadtepdlating; RoHS compliant
x Qualified according to AEC Q101
• Halogenfree according to IEC61249221
BSP89
Product Summary
VDS
RDS(on)
ID
240
6
0.35
V
W
A
PG-SOT223
4
3
2
1 VPS05163
Type
BSP89
Package
PG-SOT223
Tape and Reel Information Marking Packaging
H6327: 1000 pcs/reel
BSP89 Non dry
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID
ID puls
dv/dt
0.35
0.28
1.4
6
IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
VGS
±20
1A (>250V, <500V)
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2012-11-29
1 page  
Rev. 2.2
BSP89
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.6
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
9
W
7
0.4 6
0.3
3V
0.2 3.4V
3.6V
4.2V
4.6V
0.1 5V
6V
10V
00 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.6
5
4
3V
3
3.4V
3.6V
4.2V
2 4.6V
5V
1
6V
10V
00 0.1 0.2 0.3 0.4 A 0.6
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.6
AS
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
00 0.5 1 1.5 2 2.5 V 3.5
VGS
Page 5
00 0.1 0.2 0.3 0.4 A 0.6
ID
2012-11-29
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP89.PDF ] | |
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