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Datasheet SM6T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SM6T | TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
DO-214AA
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) |  General Semiconductor | tvs-diode |
| 2 | SM6T | Transil Features
■ Peak Pulse Power: 600 W (10/1000 µs)
■ Breakdown voltage range: From 6.8 V to 220 V
■ Uni and Bidirectional types
■ Low clamping factor
■ Fast response time
■ UL recognized
Description
The SM6T Transil series has been designed to protect sensitive equipment against electrosta |  STMicroelectronics | data |
| 3 | SM6T100A | TVS Diode ®
SM6T6V8A/220A SM6T6V8CA/220CA
TRANSILTM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
DESCRIPTION Transil diodes provide high overvoltage protection | STMicroelectronics | data |
| 4 | SM6T100A | TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
DO-214AA
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) | General Semiconductor | tvs-diode |
| 5 | SM6T100CA | TVS Diode ®
SM6T6V8A/220A SM6T6V8CA/220CA
TRANSILTM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
DESCRIPTION Transil diodes provide high overvoltage protection | STMicroelectronics | data |
| 6 | SM6T10A | TVS Diode ®
SM6T6V8A/220A SM6T6V8CA/220CA
TRANSILTM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
DESCRIPTION Transil diodes provide high overvoltage protection | STMicroelectronics | data |
| 7 | SM6T10A | TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
DO-214AA
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) | General Semiconductor | tvs-diode |
| 8 | SM6T10AY | Automotive 600W Transil SM6TY
Automotive 600 W Transil™
Datasheet − production data
Features
■
Peak pulse power: – 600 W (10/1000 µs) – 4 kW (8/20 µs) Stand-off voltage range: from 6 V to 70 V Unidirectional and bidirectional types Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C Operating Tj ma | STMicroelectronics | data |
| 9 | SM6T10CA | TVS Diode ®
SM6T6V8A/220A SM6T6V8CA/220CA
TRANSILTM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
DESCRIPTION Transil diodes provide high overvoltage protection | STMicroelectronics | data |
SM6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SM6.8 | TVS Diode, Rectifier, SMD Type SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM6.8 THRU SM200CA
Breakdown Voltage Peak Pulse Power
6.8 to 200 Volts 400 Watts
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications • Glass passivated junction • Low induct  MIC tvs-diode | | |
| 2 | SM6.8A | TVS Diode, Rectifier, SMD Type SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM6.8 THRU SM200CA
Breakdown Voltage Peak Pulse Power
6.8 to 200 Volts 400 Watts
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications • Glass passivated junction • Low induct MIC tvs-diode | | |
| 3 | SM600 | SWITCHING REGULATOR POWER OUTPUT STAGES SM600/SM601/SM602/ SM610/SM611/SM612 SWITCHING REGULATOR POWER OUTPUT STAGES
DESCRIPTION
The SM600/601/602 and SM610/611/612 series of Power Output Stages are especially designed to be driven with standard PWM integrated circuits to form an efficient switching power supply. The SM600, SM601 and SM60  Microsemi Corporation regulator | | |
| 4 | SM6002 | MOSFET Driver SM6002
Optically Coupled MOSFET Driver
w/Discharge Circuit
Description
The SM6002 consists of an input drive LED optically coupled to a photodiode array output designed to drive highly capacitive loads, including the gate of a power MOSFET. The active discharge circuit of the PDA assures quick disc  Solid State Optronic mosfet | | |
| 5 | SM6002NAF | N-Channel Enhancement Mode MOSFET SM6002NAF
®
N-Channel Enhancement Mode MOSFET
Features
• 60V/82Aa,
RDS(ON)= 8.0mΩ (max.) @ VGS=10V
• Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S D G Top View of TO-220 D
• Synchronous Rectification. • Power Management i  Sinopower mosfet | | |
| 6 | SM6002NFP | N-Channel Enhancement Mode MOSFET SM6002NFP
N-Channel Enhancement Mode MOSFET
Features
• • •
60V/80A, RDS(ON)=9.8mΩ (max.) @ VGS=10V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
SD G
Top View of TO-220-FP
D
Applications
G
• •
Synchronous Rectification. Power Management  SINOPOWER mosfet | | |
| 7 | SM6002NSF | N-Channel Enhancement Mode MOSFET SM6002NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 60V/80A,
RDS(ON)=8mW (max.) @ VGS=10V
· Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
GDS Top View of TO-220
D
· Synchronous Rectification. · Power Management in Inverter Sy Sinopower mosfet | | |
| 8 | SM6002NSKP | N-Channel Enhancement Mode MOSFET SM6002NSKP
®
N-Channel Enhancement Mode MOSFET
Features
· · ·
60V/60A, RDS(ON)=8mW (max.) @ VGS=10V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D D D D
S S
S
G
Pin 1
DFN5x6-8
D (5, 6)
Applications
· · ·
. SMPS Synchronous Rectifier. Pow SINOPOWER mosfet | | |
| 9 | SM6002NSU | N-Channel Enhancement Mode MOSFET SM6002NSU
®
N-Channel Enhancement Mode MOSFET
Features
· 60V/80A,
RDS(ON)=8mW (max.) @ VGS=10V
· Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
D S
G
Top View of TO-252-3
D
· Synchronous Rectification. · Power Management in Inverte Sinopower mosfet | |
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