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PDF FTP18N06N Data sheet ( Hoja de datos )
| Número de pieza | FTP18N06N | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | ark | |
| Logotipo |  |
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60V N-Channel MOSFET
General Features
¾ Low ON Resistance
¾ Low Gate Charge (typical 20nC)
¾ Fast Switching
¾ 100% Avalanche Tested
¾ Optimized Bvdss Capability
¾ RoHS Compliant
¾ Halogen-free available
BVDSS
60V
FTP18N06N
RDS(ON) (Max.)
18m
ID
68A
Applications
¾ Power Supply
¾ DC-DC Converters
Ordering Information
Part Number Package
FTP18N06N
TO-220
Marking
FTP18N06N
Absolute Maximum Ratings
specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current
IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation
PD Derating Factor above 25ć
TC=25ć unless otherwise
FTP18N06N
60
68
272
115
0.77
Unit
V
A
W
W/ć
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=11.9 ID=5.5A
Peak Diode Recovery dv/dt[3]
±20 V
360 mJ
4.5 V/ns
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
TJ and TSTG Operating and Storage Temperature Range
-55 to 175
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the ³$EVROXWH0D[LPXP5DWLQJV´PD\FDXVHSHUPDQHQWGDPDJHWRWKHGHYLFH
ć
Thermal Characteristics
Symbol
Parameter
Rș-& Thermal Resistance, Junction-to-Case
Rș-$ Thermal Resistance, Junction-to-Ambient
FTP18N06N
1.3
62
Unit
ć/W
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m
1/7
Rev. 2.0 Mar. 2011
1 page  
FTP18N06N
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m
5/7
Rev. 2.0 Mar. 2011
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FTP18N06N.PDF ] | |
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