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PDF MPS651 Data sheet ( Hoja de datos )
| Número de pieza | MPS651 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MPS651
0.625 W, 2 A, 60 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and Amplifier Applications
G
TO-92
H
3
Base
Collector
2
1
Emitter
J
AD
B
K
E CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Dissipation
Junction, Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Pc
TJ, TSTG
RATINGS
80
60
5
2
0.625
150, -55~150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
SYMBOL
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
HFE(1) *
HFE(2) *
HFE(3) *
HFE(4) *
VCE(sat) *
VBE(sat) *
VBE(on) *
fT
MIN.
80
60
5
-
-
75
75
75
40
-
-
-
-
75
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
-
-
-
-
0.5
0.3
1.2
1
-
UNIT
TEST CONDITIONS
V
V
V
µA
µA
V
V
V
V
MHz
IC=100µA, IE = 0
IC=10 mA, IB = 0
IE=10µA, IC = 0
VCB=80 V, IE = 0
VEB=4 V, IC = 0
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
IC=2A, IB=200mA
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=2V, IC=1A
VCE = 5V, IC = 50 mA, f = 100 MHz
http://www.SeCoSGmbH.com/
18-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
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