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Datasheet GLT41316 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GLT41316 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 |  ETC | cmos |
| 2 | GLT41316-12FA | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 | ETC | cmos |
| 3 | GLT41316-12FB | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 | ETC | cmos |
| 4 | GLT41316-12FC | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 | ETC | cmos |
| 5 | GLT41316-12J3 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 | ETC | cmos |
GLT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GLT41016 | 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT G -LINK
a t Featuresa : D . ∗ w 65,536 words by 16 bits organization. ∗ w Fast access time and cycle time. w ∗ Dual CAS Input.
∗ ∗
Low power dissipation. Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms  G-Link Technology cmos | | |
| 2 | GLT41116 | 64k x 16 CMOS Dynamic RAM with Fast Page Mode GLT41116
64k x 16 CMOS Dynamic RAM with Fast Page Mode
FEATURES
x 65,536 words by 16 bits organization. x Fast access time and cycle time. x Dual CAS input. x Low power dissipation. x Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test Mode Capability. x 256 refresh ETC cmos | | |
| 3 | GLT41316 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
| 4 | GLT41316-12FA | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
| 5 | GLT41316-12FB | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
| 6 | GLT41316-12FC | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
| 7 | GLT41316-12J3 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | |
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