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Datasheet MJ11029 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11028/D
High-Current Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc |  Motorola Semiconductors | transistor |
| 2 | MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors
High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
http://onsemi.com |  ON | transistor |
| 3 | MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR NPN
PNP MJ11029 MJ11031 MJ11033
LAB
MECHANICAL DATA Dimensions in mm (inches)
25.4 (1.0) 10.92 (0.430) 1.57 (0.062)
SEME
MJ11028 MJ11030 MJ11032
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
FEATURES
30 .15 (1.187 )
1
1 6 .89 (0.665)
2
• HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 40 |  Seme LAB | transistor |
| 4 | MJ11029 | POWER TRANSISTOR(50A /60-120V /300W) A
A
A
|  Mospec | transistor |
| 5 | MJ11029 | Trans Darlington PNP 60V 50A 3-Pin(2+Tab) TO-204 Tray |  New Jersey Semiconductor | data |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ1000/D
Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi  Motorola Inc  | ||
| 2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli  SavantIC | ||
| 3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the  Comset Semiconductors | ||
| 4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor | ||
| 5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
 Mospec Semiconductor | ||
| 6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10000/D
MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc | ||
| 7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
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