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PDF STS2305 Data sheet ( Hoja de datos )
| Número de pieza | STS2305 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS2305 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS2305
Ver 1.0
PRODUCT SUMMARY
VDSS
-20V
ID
-3.4A
RDS(ON) (mΩ) Max
57 @ VGS=-4.5V
78 @ VGS=-4.0V
83 @ VGS=-3.7V
93 @ VGS=-3.1V
115 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-20
±12
-3.4
-2.7
-13
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,07,2013
www.samhop.com.tw
1 page  
STS2305
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
150
125
VGS = -2.5 V
-3.1 V
-3.7 V
100 -4.0 V
-4.5 V
ID = -1.7A
75
50
25
0
-50 0 50 100 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = -16.0 V
VGS = -4.5 V
RG = 6 Ω
tr
td(on)
tf
td(off)
1
0.1 1 10
-ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0 V
10
1
0.1
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
-VF(S-D) - Source to Drain Voltage - V
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
-VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD = -16.0 V
-10 V
3 -4 V
2
1
ID = -3.4 A
0
0 1.5 3.0 4.5 6.0 7.5 9.0
QG - Gate Charge -nC
Jan,07,2013
www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS2305.PDF ] | |
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