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PDF HAL115 Data sheet ( Hoja de datos )
| Número de pieza | HAL115 | |
| Descripción | Hall Effect Sensor IC | |
| Fabricantes | ETC | |
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MICRONAS
INTERMETALL
HAL115
Hall Effect Sensor IC
Edition May 7, 1997
6251-414-1DS
MICRONAS
1 page  
HAL115
Electrical Characteristics, continued
Symbol
ten(O)
tr
tf
RthJSB
case
SOT-89A
RthJA
case
TO-92UA
Parameter
Enable Time of Output after
Setting of VDD
Output Rise Time
Pin No.
3
Min.
–
3–
Output Fall Time
3–
Thermal Resistance Junction to
Substrate Backside
–
Thermal Resistance
Junction to Soldering Point
–
Typ.
6
85
60
150
150
Max.
50
400
400
200
Unit
µs
ns
ns
K/W
200 K/W
Test Conditions
VDD = 12 V
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate,
30 mm x 10 mm x 1,5mm
pad size see Fig. 6
Leads at ambient tempera-
ture at a distance of 2 mm
from case
Magnetic Characteristics at TJ = –40 °C to +100 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Min.
–10.7
–12.5
1.8
Typ.
1.2
–1.2
2.4
Max.
12.5
10.7
7
Unit
mT
mT
mT
Output Voltage
5.0
2.0
BOFF min
0
BHYS
BON max
Fig. 5: Definition of magnetic switching points and
hysteresis
2.0
1.0
Fig. 6: Recommended pad size SOT-89A
Dimensions in mm
MICRONAS INTERMETALL
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HAL115.PDF ] | |
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