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TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS611(F)
Photoelectric Counter
Various Kinds Of Readers
Position Detection
• φ5mm epoxy resin package(black)
• High sensitivity: IL = 120μA(typ.)
• Half value angle: θ1/2 = ±8°(typ.)
• Protected from external light by black mold packaging.
TPS611(F)
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector−emitter voltage
VCEO 30 V
Emitter−Collector voltage
VECO 5 V
Collector current
IC 50 mA
Collector power dissipation
Collector power dissipation
derating(Ta>25°C)
PC
ΔPC /°C
150 mW
−2 mW/°C
Operating temperature range
Topr
−20~75
°C
Storage temperature range
Tstg
−30~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
0−5C1
Weight: 0.3 g (typ.)
Pin Connection
2
1. Emitter
2. Collector
1
Opto−electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Dark current
Light current
ID (ICEO)
IL
IF = 24V, E=0
VCE = 3V, E=0.1mW/cm2
Collector−emitter saturation
voltage
Switching time
Rise time
Fall time
Peak sensitivity wavelength
Half value angle
VCE(sat)
tr
tf
λP
θ1
2
IC = 15μA, E=0.1mW/cm2
VCC = 5V, IC = 2mA
RL = 100Ω
⎯
⎯
Note: Color temperature = 2870K, standard tungsten lamp
(Note)
(Note)
⎯
30
⎯
⎯
⎯
⎯
⎯
Typ.
0.005
120
0.25
6
6
900
±8
Max
0.1
⎯
0.4
⎯
⎯
⎯
⎯
Unit
μA
μA
V
μs
nm
°
1 2007-10-01