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PDF BUK9608-55B Data sheet ( Hoja de datos )
| Número de pieza | BUK9608-55B | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9608-55B
N-channel TrenchMOS logic level FET
Rev. 04 — 4 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 203 W
- 6.2 7 mΩ
- 7.1 8.4 mΩ
1 page  
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
minimum footprint; mounted on a PCB
Min Typ Max Unit
- - 0.74 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
03nn56
10−2
single shot
P δ = tp
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
BUK9608-55B_4
Modifications:
20100504
Product data sheet
• Various changes to content.
BUK9608-55B_3
20100429
Product data sheet
Change notice Supersedes
- BUK9608-55B_3
- BUK95_96_9E08_55B-02
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
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