DataSheet.es    


PDF SKM100GB12V Data sheet ( Hoja de datos )

Número de pieza SKM100GB12V
Descripción IGBT Modules
Fabricantes Semikron International 
Logotipo Semikron International Logotipo



Hay una vista previa y un enlace de descarga de SKM100GB12V (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! SKM100GB12V Hoja de datos, Descripción, Manual

SKM100GB12V
SEMITRANS® 2
SKM100GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE 20 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 100 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 4 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
VCC = 600 V
Tj = 150 °C
IC = 100 A
VGE = ±15 V
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3230 A/µs Tj = 150 °C
di/dtoff = 1330 A/µs
du/dtoff = 9350 V/ Tj = 150 °C
µs
per IGBT
Values
1200
159
121
100
300
-20 ... 20
10
-40 ... 175
121
91
100
300
550
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.75 2.20 V
2.20 2.50 V
0.94 1.04 V
0.88 0.98 V
8.10 11.6 m
13.20 15.20 m
5.5 6 6.5 V
0.1 0.3 mA
mA
6.01 nF
0.59 nF
0.589
nF
1150
nC
7.5
294 ns
38 ns
10.7 mJ
418 ns
62 ns
8.7 mJ
0.27 K/W
GB
© by SEMIKRON
Rev. 5 – 23.03.2011
1

1 page




SKM100GB12V pdf
SKM100GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 5 – 23.03.2011
5

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet SKM100GB12V.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SKM100GB123DIGBT ModuleSemikron International
Semikron International
SKM100GB124DIGBT ModuleSemikron International
Semikron International
SKM100GB125DNIGBT ModuleSemikron International
Semikron International
SKM100GB128DIGBT ModuleSemikron International
Semikron International

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar