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PDF SMK1060P Data sheet ( Hoja de datos )
| Número de pieza | SMK1060P | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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Semiconductor
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=18pF(Typ.)
• Low gate charge : Qg=35nc(Typ.)
• Low RDS(on) :RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
SMK1060P
SMK1060
Package Code
TO-220AB-3L
SMK1060P
Advanced N-Ch Power MOSFET
PIN Connection
D
G
GDS
TO-220AB-3L
S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC)*
VGSS
(Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed)*
IDM
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
±30
10
6.32
40
120
10
490
10
11.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
1.04
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
℃/W
KSD-T0P023-000
1
1 page  
Fig. 10 Gate Charge Test Circuit & Waveform
SMK1060P
Fig. 11 Resistive Switching Test Circuit & Waveform
Fig. 12 EAS Test Circuit & Waveform
KSD-T0P023-000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK1060P.PDF ] | |
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