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PDF AM2307 Data sheet ( Hoja de datos )
| Número de pieza | AM2307 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | AXElite | |
| Logotipo |  |
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AM2307
P-Channel Enhancement Mode MOSFET
Features
• -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V
RDS(ON)=140mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
Top View
D
GS
SOT-23
S
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
G
D
P Channel MOSFET
AM2307
AM2307 :
Packing
Package
A7XXX
Package
R : SOT23-3L
Packing
Blank : Tube
A : Taping
XXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Rating
-30
±20
-3
-12
Axelite Confidential Materials, do not copy or distribute without written consent.
Unit
V
A
1
1 page  
AM2307
Typical Characteristics
Source-Drain Diode Forward Voltage
10
1
TJ=150°C
TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD -Source-to-Drain Voltage (V)
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100 500
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1 D=0.05
D=0.02
0.01
1E-4
SINGLE PULSE
1E-3
0.01 0.1
1
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
10 100 500
5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.19, 2010
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AM2307.PDF ] | |
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