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PDF TLP5214 Data sheet ( Hoja de datos )

Número de pieza TLP5214
Descripción Photocouplers GaAlAs Infrared LED & Photo IC
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TLP5214 Hoja de datos, Descripción, Manual

Photocouplers GaAℓAs Infrared LED & Photo IC
TLP5214
TLP5214
Isolated IGBT/Power MOSFET gate drive
AC and brushless DC motor drives
Industrial Inverters and Uninterruptible Power Supply (UPS)
The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photo-
coupler housed in a long creepage and clearance SO16L package.
The TLP5214, a smart gate driver photocoupler, includes functions of IGBT
desaturation detection, isolated fault status feedback, soft IGBT turn-off, active
Miller cramping and under voltage lockout (UVLO).
This photocoupler is suitable for driving IGBT and power MOSFET used in
inverter applications.
The TLP5214 consists two GaAℓAs infrared light-emitting diodes (LEDs) and two
high-gain and high-speed ICs. They realize high current, high-speed output control
and output fault status feedback.
Unit: mm
Peak output current:
Guaranteed performance over temperature:
Supply current:
Power supply voltage:
Threshold input current:
Switching time (tpLH / tpHL):
Common mode transient immunity:
Isolation voltage:
Construction mechanical rating
SO16L
Height
Creepage Distance
Clearance
Insulation Thickness
2.3 mm (max)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
±4.0 A (max)
40 to 110°C
3.5 mA (max)
15 to 30 V
IFLH = 6 mA (max)
150 ns (max)
±35 kV/μs (min)
5000 Vrms (min)
TOSHIBA 11-10M1
Weight: 0.37 g (typ.)
Truth Table
IF
OFF
ON
ON
ON
OFF
UVLO
(VCC2-VE)
Not Active ( > VUVLO+)
Not Active ( > VUVLO+)
Not Active ( > VUVLO+)
Active ( < VUVLO-)
Active ( < VUVLO-)
DESAT
FAULT
(14Pin DESAT Terminal Input)
Not Active
Low ( < VDESATth)
High ( > VDESATth)
Not Active
Not Active
(3Pin FAULT Terminal Output)
High
High
Low ( FAULT)
High
High
VO
Low
High
Low
Low
Low
Start of commercial production
2014-05
1 2014-5-9

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TLP5214 pdf
TLP5214
Electrical Characteristics (Ta = 40 to 110 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min Typ.* Max Unit
Threshold Input Current(L/H)
IFLH
10 VCC = 30 V, VO < 5 V
0.8 6 mA
Threshold Input Voltage (H/L)
VFHL
VCC = 30 V, VO > 5 V
0.8 - - V
(*): All typical values are at Ta = 25°C
Note : This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Isolation Characteristics(NOTE) (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Capacitance input to output
Isolation resistance
CS Vs = 0 V, f = 1 MHz
RS R.H. 60 %, VS = 500 V
AC, 1 minute
1.0
1×1012 1×1014
5000
Isolation voltage
BVS AC, 1 second, in oil
10000
DC, 1 minute, in oil
10000
Note: This device considered a two-terminal device: pins 1, 2, 3, 4, 5, 6, 7and 8 are shorted together, and
pins 9, 10, 11, 12, 13, 14, 15 and 16 are shorted together.
pF
Ω
Vrms
Vdc
Switching Characteristics (Ta = 40 to 110 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min Typ.* Max Unit
Propagation delay time L H
tpLH
IF = 0 10 mA
50
85 150
(Note 9) H L
tpHL
Output rise time (1090 %) (Note 9)
tr
Output fall time (9010 %) (Note 9)
tf
Pulse with distortion (Note 9)
| tpHLtpLH |
IF = 10 0 mA
VCC2 = 30 V
11 Rg = 10 Ω
IF = 0 10 mA
Cg = 25 nF
IF = 10 0 mA
Duty = 50% IF = 0 10 mA
50
90 150
32
18 ns
50
Propagation delay skew
(device to device) (Note 9)(Note 10)
tpsk
IF = 0 10 mA
80
80
DESAT Sense to 90% Delay
DESAT Sense to 10% Delay
DESAT Sense to Low Level
FAULT Signal Delay
DESAT Sense to Low Propagation
Delay
DESAT Input Mute
RESET to High Level FAULT
Signal Delay
tDESAT(90%)
tDESAT(10%)
tDESAT(FAULT)
tDESAT(LOW)
tDESAT(MUTE)
tRESET(FAULT)
CDESAT = 100pF,Rg = 10 Ω
Cg = 25nF, VCC2 = 30 V
RF = 2.1kΩ
CDESAT = 100pF,Rg = 10 Ω
12 Cg = 25nF, VCC2 = 30 V
RF = 2.1kΩ
CF = Open
VCC1 = 5.5V
180 500
3.5 5 μs
300 500
ns
200
7 14
0.2 0.45 2
μs
Common Mode Transient Immunity
at High Level Output
Common Mode Transient Immunity
at Low Level Output
CMH
CML
13
IF = 10 mA
VO (min) = 26 V
±35
kV/µs
IF = 0 mA
VO (max) = 1 V
±35
(*): All typical values are at Ta = 25 °C.
Note 9: Input signal (f = 10 kHz, duty = 50%, tr = tf = 5 ns or less)
CL is approximately 15 pF which includes probe and stray wiring capacitance.
Note 10: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or
tpLH that will be seen between units at the same given conditions (supply voltage, input current, temperature,
etc).
5 2014-5-9

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TLP5214 arduino
(VOH -VCC2) – Ta
0
IO = 100 mA
-0.2
-0.4
-0.6
-0.8
-1
-40
-15 10 35 60 85
Ambient Temperature Ta C)
110
TLP5214
VOL – Ta
1
IO = 100 mA
0.8
0.6
0.4
0.2
0
-40
-15 10 35 60 85
Ambient Temperature Ta C)
110
IFLH – Ta
6
5
4
3
VCC2 = 15V / 30V
2
1
0
-40
-15 10 35 60 85
Ambient Temperature Ta C)
110
32
VCC2 = 30 V
28
VO – IF
24
20
16
12
8
4
0
01234
Input Forward Current IF (mA)
5
140
120
100
80
tpHL, tpLH, |tpHL-tpLH| – Ta
Rg = 10Ω, Cg = 25nF
IF = 10mA, VCC2 = 30 V
tPLH
tPHL
60
40
20 |tPHL tPLH|
0
-40
-15 10 35 60 85
Ambient Temperature Ta C)
110
140
120
100
80
tpHL, tpLH, |tpHL-tpLH| – IF
Rg = 10Ω, Cg = 25nF
VCC2 = 30V, Ta = 25 °C
tPLH
tPHL
60
40
20 |tPHL tPHL|
0
5 10 15
Input Forward Current IF (mA)
20
11 2014-5-9

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