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PDF MJE350G Data sheet ( Hoja de datos )
| Número de pieza | MJE350G | |
| Descripción | Plastic Medium-Power PNP Silicon Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MJE350G
Plastic Medium-Power
PNP Silicon Transistor
This device is designed for use in line−operated applications such as
low power, line−operated series pass and switching regulators
requiring PNP capability.
Features
• High Collector−Emitter Sustaining Voltage
• Excellent DC Current Gain
• Plastic Thermopadt Package
• Complement to MJE340
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VEB
IC
PD
300 Vdc
3.0 Vdc
500 mAdc
20 W
0.16 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
6.25
Unit
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
VCEO(sus)
300
−
Vdc
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
mAdc
− 100
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
mAdc
− 100
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE −
30 240
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
JE350G
Y
WW
JE350
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE350G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE350/D
Free Datasheet http://www.0PDF.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJE350G.PDF ] | |
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