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PDF AOD476 Data sheet ( Hoja de datos )
| Número de pieza | AOD476 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD476
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD476 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK Bottom View
Features
1.4
VDS (V) = 20V
ID = 25A (VGS = 10V)
RDS(ON) <21 mΩ (VGS = 10V)
RDS(ON) <28 mΩ (VGS = 4.5V)
RDS(ON) <79 mΩ (VGS = 2.5V)
100% UIS Te1s9te3d!
100% Rg Tes1te8d!
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
VGS
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
20
±16
25
20
75
13
25
33.3
16.7
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17
40
3.6
Max
25
50
4.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
t
A
=
L ⋅ ID
BV
−
V
DD
25
TA=25°C
20
15
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
40
35
30
25
20
15
10
5
0
0
50
40
1.4
494 593
692 830
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power D1e9-r3ating (Note B)
18
175
TA=25°C
30
20
10
0
0.01 0.1
1 59 10
100 1000
142
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD476.PDF ] | |
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