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PDF AOD4136 Data sheet ( Hoja de datos )

Número de pieza AOD4136
Descripción POWER Transistor
Fabricantes Freescale 
Logotipo Freescale Logotipo



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AOD4136
N-Channel SDMOSTM POWER Transistor
General Description
The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with controlled switching behavior. This universal
technology is well suited for both DC-DC and load switch applications.
Features
VDS (V) = 25V
ID = 25A
(VGS = 10V)
RDS(ON) < 11m(VGS = 10V)
RDS(ON) <19m(VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
25
20
100
17
15
30
15
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case F
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
50
4
Max
25
60
5
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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AOD4136 pdf
AOD4136
N-Channel SDMOSTM POWER Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35 30
30 25
25
20
20
15
15
10 10
55
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
0
100
25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note B)
175
1000
100
TJ(Max)=150°C
TA=25°C
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
150
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
1000
5/6
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