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PDF AOD4132 Data sheet ( Hoja de datos )
| Número de pieza | AOD4132 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Freescale | |
| Logotipo |  |
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B,G
TC=100°C B
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
63
200
30
112
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
39
0.8
Max
20
50
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
80
tA
=
L ⋅ ID
BV − VDD
60
40
20 TA=150°C
0
0.000001 0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD4132.PDF ] | |
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