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Número de pieza | EM513 | |
Descripción | (EM513 - EM518) 1.0 Ampere DO-41 Package High Voltage Silicon Diode | |
Fabricantes | Thinki Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EM513 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! EM513 thru EM518
®
EM513 thru EM518
Pb Free Plating Product
1.0 Ampere DO-41 Package High Voltage Silicon Diode
Pb
Features
• Low cost
• Low leakage
• Low forward voltage drop
• High current capability
DO-41
Mechanical Data
• Case: Molded plastic, DO-41
• Mounting Position: Any
• Terminals: Axial leads, solderable per MIL-STD-202
Unit: inch(mm)
.034(.86)
.028(.71)
.107(2.7)
.080(2.0)
Absolute Maximum Ratings (Ta = 25oC)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current , .375”(9.5mm) lead length TA =75℃
Peak forward surge current , 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum forward voltage
at IF = 1.0A DC TJ = 25oC
Maximum leakage current at TA = 25 OC
at rated DC blocking voltage at TA = 100OC
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating and storage temperature range
VRRM
VRMS
VDC
IFAV
IFSM
VF
IR
CJ
RthA
TJ ,TS
EM
513
1600
1120
1600
EM
516
1800
1260
1800
1
30
1.1
5
500
15
50
-55 to +150
EM
518
2000
1400
2000
Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC.
2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted.
Units
V
V
V
A
A
V
µA
µA
pF
℃/W
℃
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EM513.PDF ] |
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