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PDF AO7408 Data sheet ( Hoja de datos )

Número de pieza AO7408
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Freescale 
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AO7408
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
Standard Product AO7408 is Pb-free (meets ROHS & Sony 259 specifications). AO7408L is a Green
Product ordering option. AO7408 and AO7408L are electrically identical.
Features
VDS (V) = 20V
ID = 2.2 A (VGS = 4.5V)
RDS(ON) < 82m(VGS = 4.5V)
RDS(ON) < 95m(VGS = 2.5V)
RDS(ON) < 120m(VGS = 1.8V)
SC-70-6
(SOT-323)
Top View
DD
DD
GS
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
2.2
1.75
10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
160
180
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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