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PDF AO7404 Data sheet ( Hoja de datos )

Número de pieza AO7404
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Freescale 
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AO7404
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.It
is ESD protected to 1KV HBM. Standard Product AO7404 is Pb-free (meets ROHS & Sony 259
specifications). AO7404L is a Green Product ordering option. AO7404 and AO7404L are electrically identical.
Features
VDS (V) = 20V
ID = 1 A (VGS = 4.5V)
RDS(ON) < 225m(VGS = 4.5V)
RDS(ON) < 290m(VGS = 2.5V)
RDS(ON) < 425m(VGS = 1.8V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
1
0.75
5
0.35
0.22
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
300
340
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
1/4
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