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PDF AO7403 Data sheet ( Hoja de datos )

Número de pieza AO7403
Descripción P-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AO7403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to provide
excellent RDS(ON), low gate charge, and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM. Standard Product
AO7403 is Pb-free (meets ROHS & Sony 259 specifications).
AO7403L is a Green Product ordering option. AO7403 and
AO7403L are electrically identical.
Features
VDS (V) = -20V
ID = -0.7A (VGS = -4.5V)
RDS(ON) < 470m(VGS = -4.5V)
RDS(ON) < 625m(VGS = -2.5V)
RDS(ON) < 900m(VGS = -1.8V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-0.7
-0.5
-3
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
300
350
280
Max
360
425
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/

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