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PDF CPC1968 Data sheet ( Hoja de datos )

Número de pieza CPC1968
Descripción Power Relay
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! CPC1968 Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS DIVISION
Characteristics
Parameter
Blocking Voltage
Load Current, TA=25°C:
With 5°C/W Heat Sink
No Heat Sink
On-Resistance
RJC
Rating
500
5
2
0.35
0.3
Units
VP
Arms / ADC
°C/W
Features
5A Load Current with 5°C/W Heat Sink
Low 0.35On-Resistance
500VP Blocking Voltage
2500Vrms Input/Output Isolation
Low Thermal Resistance (0.3 °C/W)
Electrically Non-conductive Thermal Pad for
Heat Sink Applications
Low Drive Power Requirements
Arc-Free With No Snubbing Circuits
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Applications
Industrial Controls / Motor Control
Robotics
Medical Equipment—Patient/Equipment Isolation
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Transportation Equipment
Aerospace/Defense
Approvals
UL 508 Recognized Component: File E69938
Pin Configuration
CPC1968
ISOPLUS™-264 Power Relay
Description
The CPC1968 single-pole normally open (1-Form-A)
Solid State Power Relay is rated for up to 5A
continuous load current with a 5°C/W heat sink.
Optically coupled MOSFET technology enables the
CPC1968 to provide 2500Vrms of input to output
isolation. The output, constructed with efficient
MOSFET switches and photovoltaic die, uses IXYS
Integrated Circuits Division’s patented OptoMOS
architecture while the input, a highly efficient GaAlAs
infrared LED, provides the optically coupled control.
The combination of low on-resistance and high load
current handling capability makes this relay suitable
for a variety of high performance switching
applications.
The unique ISOPLUS-264 package pioneered by
IXYS enables Solid State Relays to achieve the
highest load current and power ratings. This package
features a unique IXYS process in which the silicon
chips are soft soldered onto the Direct Copper Bond
(DCB) substrate instead of the traditional copper
leadframe. The DCB ceramic, the same substrate
used in high power modules, not only provides
2500Vrms isolation but also very low thermal
resistance (0.3 °C/W).
Ordering Information
Part
CPC1968J
Description
ISOPLUS-264 Package (25 per tube)
Switching Characteristics
Form-A
e3
IF
ILOAD
90%
ton
10%
toff
DS-CPC1968-R01
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CPC1968 pdf
INTEGRATED CIRCUITS DIVISION
CPC1968
Typical On-Resistance
vs. Temperature
(IF=20mA, IL=1A)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
-40 -20
0 20 40 60
Temperature (ºC)
80 100
590
580
570
560
550
540
530
520
-40
Typical Blocking Voltage
vs. Temperature
(IL=50μA)
-20 0 20 40 60 80
Temperature (ºC)
100
6
4
2
0
-2
-4
-6
-1.5
Typical Load Current
vs. Load Voltage
(IF=20mA)
-1.0 -0.5 0.0 0.5
Load Voltage (V)
1.0
1.5
12
10
8
6
4
2
0
0
Leakage Current vs. Temperature
Measured Across Pins 1&2
(IF=0mA, VL=500VP)
40
35
30
25
20
15
10
5
0
-40 -20
0 20 40 60
Temperature (ºC)
80 100
3500
3000
2500
2000
1500
1000
500
0
0
Maximum Load Current
vs. Temperature
(IF=20mA)
Heat Sink
1ºC/W
5ºC/W
10ºC/W
Free Air
20 40 60 80
Temperature (ºC)
100
Output Capacitance
vs. Load Voltage
(IF=0mA, f=1MHz)
50 100 150
Load Voltage (V)
200
Energy Rating Curve
30
25
20
15
10
5
0
10μs 100μs 1ms 10ms 100ms 1s
Time
10s 100s
Unless otherwise specified, all performance data was acquired without the use of a heat sink.
The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not
indicated in the written specifications, please contact our application department.
R01 www.ixysic.com
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