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Datasheet BZX384C47 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX384C47 | Small Signal Zener Diodes www.vishay.com
BZX384-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.4 to 75 2; 5
Pulse current Single
UNIT V mA
FEATURES
• Silicon planar Zener diodes
Available
• The |  Vishay | diode |
| 2 | BZX384C47 | Small Signal Zener Diodes BZX384-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes • The Zener voltages are graded according to the international E24 standard • Standard Zener voltage tolerance is ± 5 %; replace “C” with “B” for ± 2 % tolerance • | Vishay | diode |
| 3 | BZX384C47-G | Small Signal Zener Diodes www.vishay.com
BZX384-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.4 to 75 2; 5
Pulse current Single
UNIT V mA
FEATURES
• Silicon planar Zener diodes
• The Zener volta | Vishay | diode |
| 4 | BZX384C47-V | Small Signal Zener Diodes Small Signal Zener Diodes
BZX384-V-Series
Vishay Semiconductors
Features
• Silicon planar power Zener diodes • The Zener voltages are graded according
to the international E 24 standard • Standard Zener voltage tolerance is ± 5 %;
replace "C" with "B" for ± 2 % tolerance • AEC-Q101 quali | Vishay | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 8 | BZX13 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 9 | BZX15 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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