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PDF 2N4416 Data sheet ( Hoja de datos )
| Número de pieza | 2N4416 | |
| Descripción | N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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Linear Integrated Systems
2N/SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
4 dB (max)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS1
10 dB (min)
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Gate Current
10mA
Maximum Voltages
Gate to Drain or Gate to Source LS4416
-30V
Gate to Drain or Gate to Source LS4416A
-35V
2N SERIES 2N SERIES* SST SERIES
TO-72
TO-92
BOTTOM VIEW BOTTOM VIEW
SOT-23
TOP VIEW
D 2 3G
S 1 4C
SDG
123
D1
S2
3G
*Optional Package For 2N4416
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
VGS(off)
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/SST4416
2N4416A
2N/SST4416
2N4416A
-30
-35
-2.5
V
-6
-6
IDSS Gate to Source Saturation Current
5
IGSS Gate Leakage Current
2N
SST
15 mA
-0.1 nA
-1.0
gfs Forward Transconductance
gos Output Conductance
Ciss Input Capacitance2
Crss Reverse Transfer Capacitance2
Coss Output Capacitance2
en Equivalent Input Noise Voltage
4500
7500
50
µS
0.8
4 pF
2
6 nV/√Hz
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
VGS = -20V, VDS = 0V
VGS = -15V, VDS = 0V
VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4416.PDF ] | |
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