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PDF 2SD1963 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1963 | |
| Descripción | Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Power Transistor
2SD1963
Features
Low saturation voltage.
Excellent DC current gain characteristics.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
20
6
3
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
DG
RS
180 390
270 560
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=40V
IEBO VEB=5V
hFE VCE=2V, IC=0.5A
VCE(sat) IC=1.5 A, IB=0.15A
fT VCE=6V, IE= -50mA, f=100MHz
Cob VCB=20V, IE=0A, f=1MHz
Min Typ Max Unit
50 V
20 V
6V
0.5 ìA
0.5 ìA
180 560
0.25 0.45 V
150 MHz
35 pF
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD1963.PDF ] | |
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