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Datasheet 2SC3356 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SC3356NPN Silicon RF Transistor

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz �
Renesas
Renesas
transistor
22SC3356Silicon NPN transistor

2SC3356 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 低噪声和高功率增益。 Low noise and high power gain. 用途 / Applications 用于甚高频、超高频和有线
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
transistor
32SC3356Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. Pb Lead-free 2SC3356 APPLICATIONS z Designed for low noise amplifier at VHF,UHF and C
Galaxy Microelectronics
Galaxy Microelectronics
transistor
42SC3356NPN Transistor

2SC3356 SOT-23-3L Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Colle
LGE
LGE
transistor
52SC3356MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0
NEC
NEC
transistor


2SC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SC0108T2Dx-xxDual Channel Ultra-compact Low-cost SCALE-2 Driver Core

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica
CT-Concept
CT-Concept
transistor
22SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SC100NPN Transistor

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ETC
ETC
transistor
52SC1000(2SCxxx) Low Level and General Purpose Amplifiers

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Micro Electronics
Micro Electronics
transistor
62SC1000Silicon NPN Epitaxial Transistor

ETC
ETC
transistor
72SC1002Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym
SavantIC
SavantIC
transistor



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