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PDF 2SC3606 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3606 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
2SC3606
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
12
3
80
40
150
125
-55 to 125
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
Transition frequency
Insertion gain
Noise figure
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE VCE = 10 V, IC =20mA
Cob
VCB=10V,IE=0,f=1MHz,
Cre
fT VCE =10 V, IC =20 mA
|S21e|2 (1) VCE =10 V, IC =20 mA, f =500 MHz
|S21e| 2 (2) VCE = 10 V, IC = 20 mA, f =1 GHz
NF (1) VCE =10 V, IC = 5 mA, f = 500 MHz
NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz
Marking
Marking
MH
Min Typ Max Unit
1 ìA
1 ìA
30 250 V
10 pF
0.7 1.15 pF
57
GHz
16.5 dB
7.5 11
dB
1 dB
1.1 2 dB
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