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Número de pieza | AP6679GR | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP6679GR (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP6679GR
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
9mΩ
-75A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
-30
+25
-75
-51
-300
89
0.71
-55 to 150
-55 to 150
Value
1.4
62
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
2008012303
Free Datasheet http://www.datasheet4u.com/
1 page ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-262
E
E1
E2
D3
D1
D2
D
L1
L4
E3
L3 b1
b3
b
A
c1
A1
L
c
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
SYMBOLS
Millimeters
MIN NOM MAX
A 4.24 4.44 4.64
A1 ----- ----- 2.70
b 0.66 0.76 0.86
b1 1.07 1.27 1.47
b3 0.76 0.86 1.06
c 0.30 0.40 0.50
c1 1.15 1.30 1.45
D 8.30 8.60 8.90
E 9.90 10.20 10.50
e 2.04 2.54 3.04
L 10.50 11.00 11.50
L1 9.50 10.00 10.30
L3 ---- 1.30 ----
L4 10.80 11.30 11.35
E1 7.8 (Ref.)
E2 6.6 (Ref.)
E3 2.2 (Ref.)
D1 7.8 (Ref.)
D2 7.0 (Ref.)
D3 1.7 (Ref.)
Part Marking Information & Packing : TO-262
LOGO
6679GR
YWWSSS
Part Number
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW :Week
SSS:Sequence
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AP6679GR.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AP6679GI | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP6679GI-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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