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PDF 1N914B Data sheet ( Hoja de datos )
| Número de pieza | 1N914B | |
| Descripción | SMALL SIGNAL SWITCHING DIODE | |
| Fabricantes | Galaxy Semi-Conductor | |
| Logotipo |  |
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BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
1N914,1N914A,1N914B
REVERSE VOLTAGE: 75 V
CURRENT 75 mA
FEATURES
Glass sealed envelope. (MSD)
VRM=100V guaranteed
High reliability
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
DO - 35
MAXIMUM RATINGS (Ratings at 25 ambient temperature unless otherwise specified.
1N914,1N914A,1N914B
UNITS
Maximum DC reverse voltage
Maximum recurrent peak reverse voltage
VR
VRM
75
100
Average forward rectified current
half wave rectification with resistive load
IO
75
Forward surge current t<1ms
t=1ms
t=1s
Power dissipation (note)
Junction temperature
Storage temperature range
IFSM
Ptot
Tj
TSTG
4.0
1.0
0.5
250
175
- 65 --- + 175
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
V
V
mA
A
mW
ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified.
Min Typ
Forw ard voltage @1N914,1N914A,IF=10mA
1N914B,IF=5mA
1N914B,IF=100mA
Leakage current @VR=20V
@VR=75V
@VR=20V,Tj=150
Capacitance
@ VR=0V,f=1MHZ
Reverse recovery time @IF=10mA,IR=10mA,
RL=100Ω,measured at IR=1mA
VF
IR
Ctot
trr
-
0.62
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Voltage rise w hen sw itching on
tested w ith 50mA pulses tr=20ns
Vfr -
-
Thermal resistance junction to ambient (note ) RθjA
-
-
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Max
1.0
0.72
1.0
25
5
50
4
8
UNITS
V
nA
µA
µA
pF
ns
2.5 V
500
/W
www.galaxycn.com
Document Number 0268015
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet 1N914B.PDF ] | |
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