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PDF 2SD880 Data sheet ( Hoja de datos )
| Número de pieza | 2SD880 | |
| Descripción | NPN Silicon Epitaxial Power Transistor | |
| Fabricantes | Weitron | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD880 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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NPN Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
COLLECTOR
2
FEATURES:
* Low frequency power amplifier
* Complement to 2SB834
BASE
1
3
EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
7
IC
Collector Current -Continuous
3
PC
Collector Power Dissipation
1.5
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
Units
V
V
V
A
W
℃
℃
2SD880
1
23
1. BASE
2. COLLECTOR
3. EMITTER
TO-220
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition Frequency
Collector output capacitance
Turn on time
Storage time
Fall time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE (sat)
VBE
fT
Cob
ton
ts
tf
IC=100µA, IE=0
IC=50mA, IB=0
IE= 100µA, IC=0
VCB=60V, IE=0
VEB=7V, IC=0
VCE=5V, IC=500mA
IC=3A, IB=300mA
IC=0.5A, VCE= 5V
VCE=5 V, IC=500mA
VCB=10V, IE=0, f=1MHz
IB1=-IB2=0.2A, IC=2A
VCC=30V, PW=20µs
60
60
7
60
TYP
3
70
0.8
1.5
0.8
MAX
100
100
300
1
1
UNIT
V
V
V
µA
µA
V
V
MHz
pF
µs
µs
µs
CLASSIFICATION OF hFE
Rank
Range
O
60-120
Y
100-200
GR
150-300
WEITRON
http://www.weitron.com.tw
1/3
02-Feb-07
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD880.PDF ] | |
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