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Número de pieza | MBR35100R | |
Descripción | (MBR3545 - MBR35100R) Schottky Power Diode | |
Fabricantes | Naina Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR35100R (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MBR3545 thru
MBR35100R
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 35A
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Continuous forward current
TC ≤ 110oC
VDC
IF
Surge non-repetitive forward
current, half-sine wave
TC = 25oC
IFSM
Forward voltage
Reverse current
IF = 35 A
TJ = 25oC
VR = 20V,
TJ = 25oC
VR = 20V,
TJ = 125oC
VF
IR
MBR3545(R) MBR3560(R) MBR3580(R)
45 60 80
32 42 57
45 60 80
35 35 35
600
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600
600
0.68 0.75 0.84
1.5 1.5 1.5
25 25 25
MBR35100(R)
100
70
100
35
600
0.84
1.5
25
Unit
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol MBR3545(R) MBR3560(R) MBR3580(R)
Maximum thermal resistance, junction to
case
Rth(JC)
1.5
Operating junction temperature range
Storage temperature
TJ
Tstg
-55 to 150
-55 to 175
Mounting torque (non-lubricated threads)
F
2.0
Approximate allowable weight
W
5.0
MBR35100(R)
Unit
oC/
W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR35100R.PDF ] |
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