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PDF 2N6439 Data sheet ( Hoja de datos )
| Número de pieza | 2N6439 | |
| Descripción | 60 W/ 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
• Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double
Match Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
Order this document
by 2N6439/D
2N6439
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
33
Vdc
VCBO
60
Vdc
VEBO
4.0
Vdc
PD 146 Watts
0.83 W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg – 65 to + 200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
RθJC
Min
1.2
Typ Max
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
33
—
— Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
— 2.0 mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
2N6439
1
1 page  
6
Pout = 60 W
5 VCC = 28 V
4
3
2
1
200
250 300
350
f, FREQUENCY (MHz)
400
Figure 10. Input VSWR versus Frequency
450
400 f = 225 MHz
0.1
ZOL*
450
0.1
275
Zin
0.2 Pout = 60 W, VCC = 28 V
f = 225 MHz
350
.3 275 350 400
FREQUENCY
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage and frequency.
MHz
225
275
350
400
450
Zin
OHMS
0.7 + j1.6
0.9 + j2.2
2.2 + j2.1
1.2 + j0.6
0.5 + j1.6
ZOL*
OHMS
2.2 – j1.8
2.1 – j0.9
2.1 – j0.1
2.0 + j0.2
1.9 + j0.9
Figure 11. Series Equivalent Input-Output Impedance
MOTOROLA RF DEVICE DATA
2N6439
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6439.PDF ] | |
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