Datasheet TIP141 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	TIP141	NPN TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABS	CDIL	transistor
2	TIP141	Darlington Transistors Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60 V (Minimum) = 80 V (Minimum) - TIP145 - TIP141, TIP146 = 100 V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation volt	Multicomp	transistor
3	TIP141	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base	Central Semiconductor	transistor
4	TIP141	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) TIP140/141/142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR •Complementary to TIP145/146/147 SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :TIP140 TIP141 TIP142 Collector-EmitterVoltage :TIP140 TIP141 TIP142 Emitter-Base voltage Collector	Wing Shing Computer Components	transistor
5	TIP141	Monolithic Construction With Built In Base- Emitter Shunt Resistors TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 1 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°	Fairchild Semiconductor	data
6	TIP141	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ® TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 AP	STMicroelectronics	transistor
7	TIP141	10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitt	Motorola Semiconductors	transistor
8	TIP141	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sus	ON Semiconductor	transistor
9	TIP141	POWER TRANSISTORS(10A/60-100V/125W) A A A A	Mospec Semiconductor	transistor

TIP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	TIP100	Monolithic Construction TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage -	SemiHow	data
2	TIP100	Darlington NPN Power Transistors Darlington Power Transistors (NPN) TIP100/101/102 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208	TAITRON	transistor
3	TIP100	NPN PLASTIC POWER TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Collec	CDIL	transistor
4	TIP100	NPN Plastic Medium-Power Silicon Transistors MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hF	MCC	transistor
5	TIP100	Silicon Power darlington Complementary transistors 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824	Central Semiconductor	transistor
6	TIP100	Silicon NPN Darlington Power Amp TIP100, TIP101, TIP102 Silicon NPN Darlington Power Amp, Switch TO−220 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Base TIP100 . Voltage, ........ V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . .	NTE	data
7	TIP100	POWER TRANSISTORS(8A/60-100V/80W) A A A A	Mospec Semiconductor	transistor
8	TIP100	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter	Motorola Semiconductors	transistor
9	TIP100	Plastic Medium-Power Complementary Silicon Transistors TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining	ON Semiconductor	transistor

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