(PDF) BUV27A Datasheet - SILICON POWER TRANSISTORS

Número de pieza	BUV27A
Descripción	SILICON POWER TRANSISTORS
Fabricantes	Comset Semiconductors
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No Preview Available ! SEMICONDUCTORS BUV27 – BUV27A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Collector-Base Voltage IE = 0 Collector-Emitter Voltage IB = 0 Emitter-Base Voltage IC = 0 Collector Current Collector Peak Current tp = 10mswww.DataSheet.net/ Base Current Base Current tp = 10ms Power Dissipation Junction Temperature Storage Temperature range Value BUV27 BUV27A 240 300 120 150 77 12 20 4 6 85 85 175 -65 to 175 Limiting values in accordance with the Absolute Maximum System (IEC 134) Unit V V V A A A A W °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-mb From junction to mounting base Value 1.76 Unit °C/W 29/09/2012 COMSET SEMICONDUCTORS 13 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BUV27A Data sheet ( Hoja de datos )