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PDF 2N6283 Data sheet ( Hoja de datos )
| Número de pieza | 2N6283 | |
| Descripción | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
Darlington Complementary
Silicon Power Transistors
. . . designed for general−purpose amplifier and low−frequency
switching applications.
• High DC Current Gain @ IC = 10 Adc −
hFE = 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbo
l
2N6283
2N6286
2N6284
2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
80 100
80 100
5.0
20
40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC =
25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
0.5
160
0.915
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ,Tstg
−65 to + 200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
Symbol
RθJC
Max
1.09
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
160
140
120
100
80
60
40
20
0
0
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
1
NPN
2N6283
2N6284
PNP
2N6286
2N6287
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
CASE 1−07
TO−204AA
(TO−3)
Publication Order Number:
2N6284/D
1 page  
2N6283 2N6284 2N6286 2N6287
NPN
2N6284
PNP
2N6287
20,000
10,000
7000
5000
3000
2000
VCE = 3.0 V
TJ = 150°C
25°C
30,000
20,000
10,000
7000
5000
3000
VCE = 3.0 V
TJ = 150°C
25°C
1000 −55 °C
700
2000
−55 °C
1000
500 700
300 500
200
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
20
3.0 3.0
TJ = 25°C
2.6
IC = 5.0 A
10 A
15 A
2.6
IC = 5.0 A
10 A
2.2 2.2
TJ = 25°C
15 A
1.8 1.8
1.4 1.4
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20 30 50
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
VBE(sat) @ IC/IB = 250
1.5
1.5 VBE(sat) @ IC/IB = 250
1.0 VBE @ VCE = 3.0 V
1.0 VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
20
http://onsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N6283.PDF ] | |
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