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PDF TQP7M9106 Data sheet ( Hoja de datos )
| Número de pieza | TQP7M9106 | |
| Descripción | 2W High Linearity Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TQP7M9106
2W High Linearity Amplifier
Applications
• Repeaters
• BTS Transceivers
• BTS High Power Amplifiers
• CDMA / WCDMA / LTE
• General Purpose Wireless
Product Features
• 50-1500 MHz
• +33 dBm P1dB at 940 MHz
• +50 dBm Output IP3 at 940 MHz
• 20.8 dB Gain at 940 MHz
• +5V Single Supply, 455 mA Current
• Patented internal RF overdrive protection
• Patented internal DC overvoltage protection
• On chip ESD protection
• Shut-down capability
• Capable of handling 10:1 VSWR at 5Vcc, 0.9GHz,
33 dBm CW Pout or 23.5 dBm WCDMA Pout
24-pin QFN 4x4mm SMT Package
Functional Block Diagram
Vbias 1
GND/NC 2
GND/NC 3
RFin 4
RFin 5
GND/NC 6
18 Iref
17 GND/NC
16 RFout/Vcc
15 RFout/Vcc
14 RFout/Vcc
13 GND/NC
General Description
www.DataSheet.net/
Pin Configuration
The TQP7M9106 is a high linearity, high gain 2W driver
amplifier in industry standard, RoHS compliant, QFN
surface mount package. This InGaP/GaAs HBT delivers
high performance across 0.05 to 1.5 GHz range of
frequencies while achieving 20.8 dB gain, +50 dBm
OIP3 and +33 dBm P1dB at 940MHz while only
consuming 455 mA quiescent current. All devices are
100% RF and DC tested.
Pin #
1
4, 5
14, 15, 16
18
2, 3, 6-13, 17, 19-24
Symbol
Vbias
RFin
RFout/Vcc
Iref
GND/NC
The TQP7M9106 incorporates patented on-chip circuit
techniques that differentiate it from other products in the
market. The amplifier integrates an on-chip DC over-
voltage and RF over-drive protection. This protects the
amplifier from electrical DC voltage surges and high
input RF input power levels that may occur in a system.
The TQP7M9106 is targeted for use as a driver
amplifier in wireless infrastructure where high linearity,
medium power, and high efficiency are required. The
device is an excellent candidate for transceiver line
cards and high power amplifiers in current and next
generation multi-carrier 3G / 4G base stations.
Ordering Information
Part No.
TQP7M9106
Description
1 W High Linearity Amplifier
TQP7M9106-PCB900 920-960 MHz EVB
Standard T/R size = 2500 pieces on a 13” reel.
Advanced Data Sheet: Rev C 8/9/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 8 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TQP7M9106
2W High Linearity Amplifier
Typical Performance 920-960 MHz (TQP7M9106-PCB900)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+17 dBm/tone, ∆f = 1 MHz)
WCDMA Channel power (at -50 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
920
20.6
8.5
11.3
+32.9
+49.8
+23.3
4.8
940
20.8
9.2
12.7
+33.1
+50.3
+23.5
4.8
+5
455
960
21
9.4
14.9
+33.2
+50.5
+23.5
4.8
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots 920-960 MHz (TQP7M9106-PCB900)
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
22
21
20
19
18
17
0.92
Gain vs. Frequency
- 40°C
+25°C
+85°C
0.93 0.94 0.95
Frequency (GHz)
Input Return Loss vs. Frequency
0
- 40°C
-5
+25°C
+85°C
-10
Output Return Loss vs. Frequency
0
-5 - 40°C
+25°C
+85°C
-10
-15
-20
0.96 0.92
www.DataSheet.net/
0.93 0.94 0.95
Frequency (GHz)
-15
-20
0.96 0.92
0.93 0.94 0.95
Frequency (GHz)
0.96
ACLR vs. Output Power at 940MHz
-45
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-50 Frequency : 940 MHz
-55
- 40 °C
-60 +25°C
+85 °C
-65
17
19 21 23
Output Power (dBm)
25
OIP3 vs. Output Power vs. Frequency
55
Temp.=+25oC
1MHz Tone Spacing
50
45 920 MHz
940 MHz
960 MHz
40
35
11
13 15 17 19
Output Power / Tone(dBm)
21
23
ACLR vs. Output Power vs. Frequency
-45
W-CDMA 3GPP Test Model 1+64 DPCH
Temp.=+25oC
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-50 920 MHz
940 MHz
960 MHz
-55
-60
OIP3 vs. Output Power at 940MHz
55
1MHz Tone Spacing
50
45
- 40 °C
+25°C
40 +85 °C
-65
17
35
34
33
32
31
30
920
19 21 23
Output Power (dBm)
P1dB vs. Frequency
35
25 11 13 15 17 19 21
Output Power / Tone(dBm)
1000
900
Icc vs. Output Power
Frequency : 940 MHz
Temp.=+25oC
800
+85°C
+25°C
−40°C
700
600
500
930 940 950
Frequency (MHz)
400
960 15
19 23 27 31
Output Power (dBm)
23
35
Advanced Data Sheet: Rev C 8/9/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 8 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TQP7M9106.PDF ] | |
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