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PDF TGA2526 Data sheet ( Hoja de datos )
| Número de pieza | TGA2526 | |
| Descripción | 2 - 20 GHz Low Noise Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA2526
2 - 20 GHz Low Noise Amplifier with AGC
Measured Performance
Bias conditions: Vd = 5 V, Id = 100 mA, Vg1 = -0.55 V ,
Vg2 = +1.3 V Typical
25
20
15
10 Gain
5 IRL
0
-5 ORL
-10
-15
-20
-25
-30
-35
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
10
9
8
7
6
5
4
3
2
1
0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Key Features
••
Frequency Range: 2 - 20 GHz
Midband NF: 2.5 dB
••••••
Gain: 17.5 dB
>30 dB adjustable gain with Vg2
TOI: 29 dBm Typical
22 dBm Nominal Psat, 20 dBm Nominal P1dB
ESD Protection circuitry on Vd, Vg1, and Vg2
Bias: Vd = 5 V, Id = 100 mA, Vg1 = -0.55 V,
••
Vg2 = +1.3 V, Typical
Technology: 3MI 0.15 um Power pHEMT
Chip Dimensions: 2.090 x 1.350 x 0.100 mm
Primary Applications
•
•
•
Wideband Gain Block / LNA
X-Ku Point to Point Radio
Electronic Warfare Applications
Product Description
The TriQuint TGA2526 is a compact LNA Gain
Block MMIC with adjustable gain control (AGC).
www.DataSheet.net/
The LNA operates from 2-20 GHz and is designed
using TriQuint’s proven standard 0.15 um Power
pHEMT production process.
The TGA2526 provides a nominal 20 dBm of
output power at 1 dB gain compression with a
small signal gain of 17.5 dB. Greater than 30 dB
adjustable gain can be achieved using the Vg2 pin.
Typical noise figure is 2.5 dB at 12 GHz. Special
circuitry on Vd, Vg1 and Vg2 pins provides ESD
protection.
The TGA2526 is suitable for a variety of wideband
systems such as point to point radios, radar
warning receivers and electronic counter
measures.
The TGA2526 is 100% DC and RF tested on-wafer
to ensure performance compliance. The TGA2526
has a protective surface passivation layer providing
environmental robustness.
Lead-Free & RoHS compliant.
Evaluation Boards are available upon request.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 Rev -
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA2526
Bias conditions: Vd = 5 V, Id = 100 mA, Vg1 = -0.55 V, Vg2 = +1.3 V Typical
25
20
15
10
5
0
5 10 15 20 25 30 35
Frequency (GHz)
www.DataSheet.net/
0
-5 IRL
ORL
-10
-15
-20
-25
-30
0
5 10 15 20 25 30 35
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 Rev -
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Mechanical Drawing
TGA2526
www.DataSheet.net/
Units: millimeters
Thickness: 0.10
Die x,y size tolerance: +/ - 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad # 1
Bond Pad # 2
Bond Pad # 3
RF In
Vg2
Vd2
(Not used)
0.100 x 0.158
0.100 x 0.100
0.135 x 0.110
Bond Pad # 4
Bond Pad # 5
Bond Pad # 6
Vd1
RF Out
Vg1
0.110 x 0.135
0.100 x 0.158
0.100 x 0.100
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 Rev -
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2526.PDF ] | |
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