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PDF 2SC4445 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4445 | |
| Descripción | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | |
| Fabricantes | Sanken electric | |
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2SC4445
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4445
900
800
7
3(Pulse6)
1.5
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
VCB=800V
VEB=7V
V(BR)CEO
hFE
VCE(sat)
IC=10mA
VCE=4V, IC=0.7A
IC=0.7A, IB=0.14A
VBE(sat)
fT
IC=0.7A, IB=0.14A
VCE=12V, IE=–0.3A
COB VCB=10V, f=1MHz
(Ta=25°C)
2SC4445
100max
100max
800min
10 to 30
0.5max
1.2max
15typ
50typ
Unit
µA
µA
V
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω) (A)
(V)
(V) (A)
250 357 0.7 10
–5 0.1
IB2
(A)
–0.35
ton
(µs)
0.7max
tstg
(µs)
4max
tf
(µs)
0.7max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
3
IB=700mA
500mA
300mA
2
200mA
100mA
1
50mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
VCE(sat)
2
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
1
0
0.01 0.05 0.1
0.5 1
3
Collector Current IC(A)
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Temperature Characteristics (Typical) t on• t stg• t f– I C Characteristics (Typical)
(VCE=4V)
50 7
125˚C
5
25˚C
–55˚C
10
5
VCC 250V
IC:IB1:–IB2=10:1.5:5
1
0.5
ton
tstg
tf
2
0.01
0.05 0.1
0.5
Collector Current IC(A)
1
0.1
3 0.1
0.5 1
Collector Current IC(A)
2
θ j-a– t Characteristics
4
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
Reverse Bias Safe Operating Area
10
5
Pc–Ta Derating
60
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
5
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
1
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
0.1 Duty:less than 1%
0.05
5
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
40
20
Without Heatsink
3.5
0
0 50 100
Ambient Temperature Ta(˚C)
150
105
1 page | ||
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| PDF Descargar | [ Datasheet 2SC4445.PDF ] | |
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