|
|
Número de pieza | 2SC3649 | |
Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3649 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SA1419/2SC3649]
4.5
1.6 1.5
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)120V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200
Marking 2SA1419 : AE
2SC3649 : CE
140 S 280 200 to 400
hFE rank : R, S, T
Ratings
(–)180
(–)160
(–)6
(–)1.5
(–)2.5
500
1.5
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
(–)1 µA
(–)1 µA
100*
400*
80
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SC3649.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC3640 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC3642 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
2SC3643 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
2SC3644 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |